10:45 AM - 11:00 AM
[21a-W541-7] Impact of deep-level traps on depth profiling of homoepitaxial lightly-doped n-type GaN
Keywords:GaN,vertical power devices,deep level
Depth profiling of net donor concentration based on a capacitance-voltage measurement is widely used. We investigated lightly-doped n-GaN which is grown for GaN vertical power devices in detail and found that an effect of deep-level traps should be considered to obtain true depth profile.