11:00 AM - 11:15 AM
[21a-W541-8] Wafer mapping of deep level trap concentration in homoepitaxial n-type GaN by capacitance transient measurement
Keywords:gallium nitride,deep level,wafer mapping
We investigated wafer mapping of electron trap density for a quarter wafer of homoepitaxially grown n-type GaN by transient capacitance (C-t) measurement with general capacitance meters (sampling time: ~10 ms). Relationships between the properties in a GaN wafer can be evaluated rapidly by combining this method with the capacitance-voltage and current-voltage measurements.