11:15 AM - 11:30 AM
[21a-W541-9] Deep level transient spectroscopy of low–carrier concentration n-GaN layers grown on freestanding GaN substrates
Keywords:GaN,DLTS,Schottky contact
DLTS measurements were conducted for low Si and C doped n-Gann Schottky contacts. For the low-C-doped samples, conventional defects od E1 and E3 were detected. However, for high-C-doped samples, no defects were detected. This change was consistent with site change of C atoms. By controlling C-doping level, defect formation was suppressed.