Annealing-temperature dependence of Capacitance-Voltage characteristics of HfO<sub>2</sub>/SiO<sub>X</sub>/Si structures

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.4 Thin films and New materials

Mon. Mar 21, 2016 1:15 PM - 7:00 PM H103 (H)

Tamio Endo(Gifu Univ.), Kyoko Namura(Kyoto Univ.), Tomoko Nagata(Nihon Univ)

3:45 PM - 4:00 PM

〇(M1)Satoshi Ueoka¹, Shozo Miyake¹, Yasushi Hotta¹, Koji Arafune¹, Shin-ichi Satoh¹ (1.Univ. of Hyogo)

Keywords:high-k,Annealing temperature