[21p-H103-1~21] 6.4 薄膜新材料

▼ [21p-H103-2] Measures for mitigating environmental degradation of Two Dimensional Hafnium Disulfide Field Effect Transistors

〇(M2)Upadhyaya Vikrant¹、kanazawa Toru¹、Miyamoto Yasuyuki¹ (1.TokyoTech)

キーワード：Two dimensional materials, Transition metal dichalcogenides, Hafnium Disulfide, Field effect transistors,Environmental degradation

Transition Metal Dichalcogenides (TMD) have emerged as the potential candidate for pursuing Moore’s Law owing to their unique property of realizing defect free atomically thin surface. Hafnium Disulfide (HfS2), the novel TMD, is estimated to have optimum values of bandgap (1.23eV) and acoustic phonon limited mobility (1833 cm2/Vs). But like other two dimensional materials, HfS2 is also highly vulnerable to environmental entities like moisture and oxygen and performance degradation of HfS2 FETs is observed with passage of time. This paper presents initial results of broader research plan to figure out measures for mitigating causal factors for such deterioration. Post fabrication annealing process is highly useful in this endeavor.