[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-10] Formative Mechanism of Conducting Path in Resistive Random Access Memory
~ Electronic State Analysis for Various NiO Surfaces ~

〇(DC)Takumi Moriyama^1,4, Takahiro Yamasaki², Takahisa Ohno^2,3, Satoru Kishida^1,4, Kentaro Kinoshita^1,4 (1.Tottori Univ., 2.NIMS, 3.IIS, Univ. of Tokyo, 4.TiFREC)

Keywords:Resistive Random Access Memory,First-principles Calculation,NiO