[21p-H111-1~22] 6.3 Oxide electronics

△ [21p-H111-11] Aspects of Resistive Transition Phenomena of Sputter-Deposition TiO₂ Films

〇Nozomi Kawashima¹, Shingo Sato¹, Yasuhisa Omura¹ (1.Kansai Univ.)

Keywords:resistive transition phenomena,TiO2,oxygen-ion diffusion

In this study, we discovered that the Au/TiO2/n-Si capacitor showed the bipolar-type resistive transition. As I-V charactersitcs of post-set capacitor and post-reset capacitor were identical, it was suggested that the structural recovery took place around the center of the film, not near the electrode or the Si substrate. So, we consider that the oxygen ion diffusion is not so prominent.