[21p-H111-1~22] 6.3 Oxide electronics

[21p-H111-16] Effect of Ge nuclei size on epitaxial growth of iron oxide nanodots on Si substrate

〇(D)Takafumi Ishibe¹, Yoshiki Maeda¹, Hideki Matsui¹, Kentaro Watanabe¹, Nobuyasu Naruse², Yoshiaki Nakamura¹ (1.Osaka Univ., 2.Hokkaido Univ.)

Keywords:oxide material,nanostructure,resistive switching

Resistance random access memory(ReRAM) is a promising as a high-speed, energy-saving non-volatile memory device. Iron oxides formed on Si substrates have advantages in terms of low cost and environment friendly material. Reportedly, polycrystalline Fe₃O₄ films on Si substrates exhibited the resistive switching behavior. However, their resistive switching ratio between off- and on-state were poor(~10). To enhance the resistive switching ratio, we have focused on epitaxial nanodots, which have less crystal defects than bulk. Recently, we have developped the technique of epitaxial growth of Fe₃O_4-δ on Si substrates, using Ge nuclei as the nucleation sites of Fe₃O_4-δ. Furthermore, we have cofirmed that Ge nuclei have a role in suppressing the mixing between Fe₃O_4-δ and Si. However, the effect of Ge nuclei on epitaxial growth of Fe₃O_4-δ have not been investigated. This work reveals the effect of Ge nuclei size on epitaxial growth of Fe₃O_4-δ.