Relationship between barrier modulation and memory properties of Pt/Nb:STO Schottky junction

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

5:45 PM - 6:00 PM

〇Toshiki Shiomi¹, Yuuto Hagihara¹, Satoru Kishida^1,2, Kentaro Kinoshita^1,2 (1.Tottori Univ., 2.Tottori Integrated Frontier Research Center)

Keywords:resistive switching memory,Oxide electronics