The 63rd JSAP Spring Meeting, 2016

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Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[21p-H111-1~22] 6.3 Oxide electronics

Mon. Mar 21, 2016 1:00 PM - 6:45 PM H111 (H)

Hisashi Shima(AIST), Yasuhisa Naitoh(AIST)

2:15 PM - 2:30 PM

△ [21p-H111-6] Material selection for vacancy-injection layers
in resistive switching memory based on redox reactions

〇Ryosuke Nakagawa1, Atushi Fukuti1, Masashi Arita1, Yasuo Takahashi1 (1.Graduate School of IST, Hokkaido Univ.)

Keywords:resistive switching memory,ReRAM