[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

[21p-H112-4] Effects of Si Gas Flow on Si Adsorption Sites of GaAsN Films Grown by Atomic Layer Epitaxy

〇yuki yokoyama¹, Masaru Horikiri¹, Tomohiro Haraguchi¹, Toshihiro Yamauchi¹, Hidetoshi Suzuki¹, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki)

Keywords:Atomic layer epitaxy,Si doping