[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

△ [21p-H112-7] Effect of annealing on crystalline quality of MOVPE grown GaAs/Ge/Si structure

〇Ryo Nakao^1,2, Masakazu Arai^1,2, Tsuyoshi Yamamoto¹, Shinji Matsuo^1,2 (1.NTT Device Technology Labs, 2.Nanophotonics Center)

Keywords:epitaxial growth

We confirmed that the pit-density reduction and photoluminescence intensity increasing by using thermal cycle annealing on MOVPE-grown GaAs/Ge/Si structure.