[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

[21p-H112-9] Growth of InGaAsP-based MQWs on InP membrane directly bonded to Si wafer

〇Takuro Fujii^1,2, Koji Takeda^1,2, Erina Kanno¹, Koichi Hasebe^1,2, Tsuyoshi Yamamoto¹, Takaaki Kakitsuka^1,2, Shinji Matsuo^1,2 (1.NTT Device Technology Labs., 2.Nanophotonics Center)

Keywords:Epitaxial growth,Silicon photonics,Semiconductor laser

We have developed a small and low-power-consumption membrane laser on Si. In our previous report, the InGaAsP-MQW on Si was fabricated with MOVPE growth of MQW on an InP substrate, followed by an direct bonding to a Si substrate. In this study, we demonstrate the MOVPE growth of an InGaAsP-MQW on an InP membrane directly bonded to a Si substrate. Various measurements such as PL and XRD proved the high crystal quality of epitaxial layer. Moreover, we fabricated the membrane laser on Si using this growth method. The laser performed continuous wave emission at room temperature.