[21p-H112-1~13] 15.3 III-V-group epitaxial crystals

[21p-H112-10] Wurtzite AlInP grown on GaN (10-10) and green emission

〇Takashi Fukui¹, Yoshihiro Hiraya¹, Fumiya Ishizaka¹, Katsuhiro Tomioka^1,2 (1.Hokkaido Univ., 2.JST-PRESTO)

Keywords:MOVPE,AlInP,Wurtzite

We grew AlInP on GaN (10-10) substrate in order to transfer the wurtzite (WZ) structure to grown layers. X-ray diffraction and Raman scattering analyses indicate that the dominant crystal structure of the AlInP layer was a WZ structure. Cathode luminescence measurements at 35K revealed strong green emissions from the WZ AlInP layer, suggesting an energy band gap change from indirect to direct.