[21p-H121-1~17] 15.4 III-V-group nitride crystals

[21p-H121-11] Growth of semi-polar AlGaN/AlN layers on m-plane sapphire substrates and their doping and quantum-well emission properties

〇(M1)Issei Oshima^1,2, Masafumi Jo¹, Noritoshi Maeda¹, Norihiko Kamata², Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ.)

Keywords:semi-polar,AlGaN,MOCVD

Semi-polar AlGaN heterostructures are attracting much attention in order to obtain a high internal quantum efficiency (IQE) in deep-ultraviolet light emitting diodes (DUV-LEDs). However, the growth of semi-polar AlN and AlGaN is difficult compared with an usual AlN growth on a c-plane sapphire. In this report, We grew an AlN layer at 1500℃ and then grew a Si-doped AlGaN layer at 1140℃. Furthermore, We grew an AlGaN quantum wells (QWs). We obtained room temperature DUV PL emission from the semi-polar QWs. The PL peak wavelength was 302 nm.