1:30 PM - 3:30 PM
[21p-P10-1] Etching Rate of Reactor Parts Coating Film by Chlorine Trifluoride Gas
Keywords:CVD,Cleaning,Silicon carbide
The etching rate of coating films of silicon carbide and pyrolitic carbon by chlorine trifluoride gas was evaluated, in order to achieve the SiC epitaxial reactor cleaning process.