[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-1] Etching Rate of Reactor Parts Coating Film by Chlorine Trifluoride Gas

Kohei Shioda¹, 〇Hitoshi Habuka¹, Katsuya Fukae² (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo)

Keywords:CVD,Cleaning,Silicon carbide

The etching rate of coating films of silicon carbide and pyrolitic carbon by chlorine trifluoride gas was evaluated, in order to achieve the SiC epitaxial reactor cleaning process.