The 63rd JSAP Spring Meeting, 2016

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P10 (Gymnasium)

1:30 PM - 3:30 PM

[21p-P10-10] The formation mechanism of SiC periodic structure by femtosecond laser irradiation

Yuji Hirose1, Osamu Eryu1 (1.Nagoya Inst.)

Keywords:periodic structure,femtosecond laser,formation mechanism

We suggest an adjustable nano-structure on the surface of SiC forming method by the femtosecond laser irradiation.
Femtosecond laser irradiation at fluence of the machining threshold can form fine periodic structure in a self-organized manner.
The formation mechanism is said to be interference between the incident light and the scattered light or the surface electromagnetic waves from solid surface.
But there is not much the number of discussion of irradiation pulse.
Therefore, we changed the number of irradiation pulses using a stage which moves at high speed.