1:30 PM - 3:30 PM
[21p-P10-13] First-principles analysis on defect level distribution at 4H-SiC(0001)/SiO2
Keywords:SiC,Defect level,First-principles calculations
In the SiC power devices, a presence of defect levels near the conduction band minima is a critical issue. Up to now, the importance of C related defect levels are suggested. However, the dependence of the defect level positions on the defect local structures are not studied well. In this presentation, we performed systematical first-principles calculations for SiC/SiO2 interface for several defect structures and investigated the dependence of the defect level position on the defect local structure.