[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-13] First-principles analysis on defect level distribution at 4H-SiC(0001)/SiO2

〇Tomoaki Kaneko^1,2, Takahiro Yamasaki^1,2, Nobuo Tajima^1,2,3, Jun Nara^1,2, Tatsuo Schimizu⁴, Koichi Kato³, Takahisa Ohno^1,2,3 (1.NIMS, 2.MARCEED, 3.IIS, Univ. of Tokyo, 4.Toshiba R&D Center)

Keywords:SiC,Defect level,First-principles calculations

In the SiC power devices, a presence of defect levels near the conduction band minima is a critical issue. Up to now, the importance of C related defect levels are suggested. However, the dependence of the defect level positions on the defect local structures are not studied well. In this presentation, we performed systematical first-principles calculations for SiC/SiO2 interface for several defect structures and investigated the dependence of the defect level position on the defect local structure.