[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

△ [21p-P10-17] Research on Pseudo-CMOS logic inverters using 4H-SiC nMOSFETs

〇Hirofumi Nagatsuma¹, Shin-Ichiro Kuroki¹, Tatsuya Kurose¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Takamaro Kikkawa¹, Takahiro Makino³, Takeshi Ohshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ. Nano device, 2.Phenitec Semiconductor Co.,Ltd., 3.Japan Atomic Energy Agency, 4.KTH Royal Institute of Technology)

Keywords:Silicon Carbide,harsh environment,nMOSFET