[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-19] Optimum Structures for Gamma-ray Radiation Resistant SiC-MOSFETs

〇(M1)satoshi mitomo^1,2, Takuma Matsuda^1,2, Koichi Murata^1,2, Takashi Yokoseki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto HIjikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

Keywords:SiC MOSFET,gamma-ray,oxide thickness

We investigated the oxide thickness dependence of gamma-ray irradiation response on SiC MOSFETs to optimize the structures of them.The Vth of bigger oxide thickness felt in normally-on at fewer dose than that of smaller one. Thickness of gate oxide of SiC MOSFET influences the radiation tolerance and, in addition, the smaller thickness has a higher radiation tolerance.