Simulation of Incomplete Ionization on SiC devices during high speed switching

Presentation information

Poster presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P10 (Gymnasium)

1:30 PM - 3:30 PM

〇Kohei Ebihara¹, Kotaro Kawahara¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

Keywords:SiC,Incomplete Ionization,Simulation