Kohei Shioda¹, 〇Hitoshi Habuka¹, Katsuya Fukae² (1.Yokohama Nat. Univ., 2.Kanto Denka Kogyo)

〇Norihito Yabuki¹, Satoshi Torimi¹, Satoru Nogami¹, Tadaaki Kaneko², Makoto Kitabatake¹ (1.Toyo Tanso, 2.Kwansei Gakuin Univ.)

〇shunnosuke Akabane¹, Go Sahara¹, Naoto Ichikawa², Masashi Kato², Kazuhiko Maeda¹, Takayuki Iwasaki¹, Tetsuo Kodera¹, Mutsuko Hatano¹ (1.Tokyo Inst. of Tech, 2.Nagoya Inst. of Tech)

〇naoto ichikawa¹, Masashi Kato¹, Masaya Ichimura¹ (1.NIT)

〇Shingo Murase¹, Tomoyoshi Mishima², Tohru Nakamura², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

〇Shinya Seki¹, Tetsuro Muramatsu¹, Tohru Sugahara¹, Shijo Nagao¹, Katsuaki Suganuma¹ (1.Osaka Univ.)

〇Tomoyuki Koganezawa¹, Satoshi Yasuno¹, Satoshi Ishimaru^1,2 (1.JASRI, 2.SPring-8 Service)

〇Kenichi Yoshida¹, Junko Maekawa¹, Hitoshi Kawanowa¹ (1.ITC)

〇Ryota Kojima¹, Hiroshi Ikenoue¹, Masaru Suwa¹, Akihiro Ikeda¹, Daisuke Nakamura¹, Tanemasa Asano¹, Tatsuo Okada¹ (1.Graduate School of I.S.E.E., Kyushu Univ.)

〇Yuji Hirose¹, Osamu Eryu¹ (1.Nagoya Inst.)

〇Daiki Sodeoka¹, Hiroyuki Kinoshita¹, Hidetoshi Ishida¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

〇(M1)SAE SHIMIZU¹, JIANBO LIANG¹, MANABU ARAI², NAOTERU SHIGEKAWA¹ (1.Osaka City Univ., 2.New Japan Radio Co., Ltd.)

〇Tomoaki Kaneko^1,2, Takahiro Yamasaki^1,2, Nobuo Tajima^1,2,3, Jun Nara^1,2, Tatsuo Schimizu⁴, Koichi Kato³, Takahisa Ohno^1,2,3 (1.NIMS, 2.MARCEED, 3.IIS, Univ. of Tokyo, 4.Toshiba R&D Center)

〇Takahiro Yamasaki^1,2, Nobuo Tajima^1,2, Tomoaki Kaneko^1,2, Tatsuo Schimizu³, Koichi Kato⁴, Takahisa Ohno^1,2,4 (1.NIMS, 2.MARCEED, 3.Toshiba R&D Center, 4.IIIS, Univ. of Tokyo)

〇Kousuke Muraoka¹, Hiroshi Sezaki^1,2, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Takamaro Kikkawa¹, Shin-Ichiro Kuroki¹ (1.Hiroshima Univ. Nanodevice, 2.Phenitec Semiconductor)

〇(B)Tatsuya Kurose¹, Shin-Ichiro Kuroki¹, Hirofumi Nagatsuma¹, Seiji Ishikawa², Tomonori Maeda², Hiroshi Sezaki², Takamaro Kikkawa¹, Takahiro Makino³, Takeshi Ohshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ., 2.Phenitec Co.,Ltd., 3.Atomic Energy Agency, 4.KTH)

〇Hirofumi Nagatsuma¹, Shin-Ichiro Kuroki¹, Tatsuya Kurose¹, Seiji Ishikawa^1,2, Tomonori Maeda^1,2, Hiroshi Sezaki^1,2, Takamaro Kikkawa¹, Takahiro Makino³, Takeshi Ohshima³, Mikael Ostling⁴, Carl-Mikael Zetterling⁴ (1.Hiroshima Univ. Nano device, 2.Phenitec Semiconductor Co.,Ltd., 3.Japan Atomic Energy Agency, 4.KTH Royal Institute of Technology)

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima¹, Yasuto Hijikata² (1.JAEA, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

〇(M1)satoshi mitomo^1,2, Takuma Matsuda^1,2, Koichi Murata^1,2, Takashi Yokoseki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Takeshi Ohshima², Syuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Yasuto HIjikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd.)

〇(M1)KOICHI MURATA^1,2, Satoshi Mitomo^1,2, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Takahiro Makino², Akinori Takeyama², Shinobu Onoda², Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima², Yasuto Hijikata¹ (1.Saitama Univ., 2.JAEA, 3.Sanken Electric Co., Ltd)

〇Ryusei Fujita¹, Kousuke Konaga¹, Takao Kotani², Yosinari Kamakura¹, Nobuya Mori¹ (1.Osaka Univ, 2.Tottori Univ)

〇Kohei Ebihara¹, Kotaro Kawahara¹, Hiroshi Watanabe¹, Shuhei Nakata¹, Satoshi Yamakawa¹ (1.Mitsubishi Electric Corp.)

〇Sawa Araki¹, Tatsuhiro Suzuki¹, Mari Yamashita¹, Toshiaki Ohno², Hisashi Yakumaru³, Hiroki Sawada⁴, Satoshi Tanimoto¹ (1.NISSAN ARC, LTD., 2.Nordson Advanced Technology Japan K.K., 3.Hitachi Power Solutions Co.,Ltd., 4.IWATSU TEST INSTRUMENTS CORPORATION)

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Tetsuya Mori¹, Satoshi Tanimoto¹, Shota Iizuka², Yuuta Niitsuma², Kan Akatsu² (1.Nissan ARC, 2.Shibaura Inst.)