Akinori Takeyama

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Speaker, Author, Co-Author

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P10 (Gymnasium)

Poster presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 3:30 PM

[21p-P10-18] Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to gamma-ray irradiation

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima¹, Yasuto Hijikata² (1.JAEA, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

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