[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-18] Effect of high temperature and humidity on dose dependence of charges generated in SiC MOSFETs due to gamma-ray irradiation

〇Akinori Takeyama¹, Takuma Matsuda^1,2, Takashi Yokoseki^1,2, Satoshi Mitomo^1,2, Koichi Murata^1,2, Takahiro Makino¹, Shinobu Onoda¹, Shuichi Okubo³, Yuki Tanaka³, Mikio Kandori³, Toru Yoshie³, Takeshi Ohshima¹, Yasuto Hijikata² (1.JAEA, 2.Saitama Univ., 3.Sanken Electric Co., Ltd.)

Keywords:silicon carbide,MOSFET,radiation response