[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-24] Fabrication and characterization of low-inductance SiC power semiconductor module

〇Tatsuhiro Suzuki¹, Mari Yamashita¹, Tetsuya Mori¹, Satoshi Tanimoto¹, Shota Iizuka², Yuuta Niitsuma², Kan Akatsu² (1.Nissan ARC, 2.Shibaura Inst.)

Keywords:power module,fast switching,stray inductance

Power semiconductor devices such as SiC and GaN devices have a potential of reducing switching losses by increasing their switching speed. But their switching speed are limited by stray inductances in their power module. Our solution to reduce stray inductances is explained in this presentation with our new module structure and experimental results.