1:30 PM - 3:30 PM
[21p-P10-24] Fabrication and characterization of low-inductance SiC power semiconductor module
Keywords:power module,fast switching,stray inductance
Power semiconductor devices such as SiC and GaN devices have a potential of reducing switching losses by increasing their switching speed. But their switching speed are limited by stray inductances in their power module. Our solution to reduce stray inductances is explained in this presentation with our new module structure and experimental results.