1:30 PM - 3:30 PM
[21p-P10-5] Mapping of ion-implanted n-SiC Schottky contacts using scanning internal photoemission microscopy
Keywords:scanning internal photoemission microscopy,n-SiC,ion implantation
We have demonstrated scanning internal photoemission microscopy for two-dimensional evaluation of the induced damages upon N-ion-implantation to the n-SiC surfaces.
The N-ion-implanted regions have been clearly visualized as a photoyield image. We found significant increase of photoyield in the periphery of the ion implanted region.
The N-ion-implanted regions have been clearly visualized as a photoyield image. We found significant increase of photoyield in the periphery of the ion implanted region.