[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-5] Mapping of ion-implanted n-SiC Schottky contacts using scanning internal photoemission microscopy

〇Shingo Murase¹, Tomoyoshi Mishima², Tohru Nakamura², Kenji Shiojima¹ (1.Univ. of Fukui, 2.Hosei Univ.)

Keywords:scanning internal photoemission microscopy,n-SiC,ion implantation

We have demonstrated scanning internal photoemission microscopy for two-dimensional evaluation of the induced damages upon N-ion-implantation to the n-SiC surfaces.
The N-ion-implanted regions have been clearly visualized as a photoyield image. We found significant increase of photoyield in the periphery of the ion implanted region.