[21p-P10-1~24] 15.6 Group IV Compound Semiconductors (SiC)

[21p-P10-7] Structural characterization of Ni/SiC and Ti/SiC interface formed by RTA

〇Tomoyuki Koganezawa¹, Satoshi Yasuno¹, Satoshi Ishimaru^1,2 (1.JASRI, 2.SPring-8 Service)

Keywords:silicon carbide,metal,siliside

In this study, we carried out X-ray diffraction (XRD) measurement with a two-dimensional (2D) detector and the hard X-ray photoelectron spectroscopy (HAXPES) to evaluate the chemical states and the crystallinity at the Ni/SiC and Ti/SiC interface layer with anneal treatment. For the Ti/SiC, XRD and HEXPES results indicated that the formation of Ti₅Si₃, TiC started at temperature around 400 °C and these resultants were grown epitaxially at the interface.