[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-1] The formation of hydrogen-related donors in n-type silicon using proton irradiation and hydrogen-plasma treatment

〇AKIRA KIYOI¹, TSUYOSHI KAWAKAMI¹, TADAHARU MINATO¹, MASAYOSHI TARUTANI¹ (1.Mitsubishi Electric Corp.)

Keywords:semiconductor,defect

It is well known that porton irradiation and annealing with moderate temperature leads to the donor formation in monocrystaline silicon (hydrogen-related donors). But their activation factor is much less than conventional doping methods such as group V ion implantation. This study invstigated the formation of hydrogen-related donors in highly resistive n-type silicon using both porton irradiation and hydrogen-plasma treatment in order to activate hydrogen-related donors effectively. In our experiment, the samples which were irradiated with proton and treated with hydrogen plasma were followed by post-irradiation annealing with a variety of temperature. Thereafter we measured spreading resistance profiles of these samples. As a result, hydrogen plasma treatment was effective to make donors active around the surface area. In this presentation, we are going to explain the detail of our spreading resistance profiles focusing on the difference between FZ silicon wafer and MCZ silicon wafer.