[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-2] Effect of substitutional dopant on point defect concentration in growing single Ge crystal

〇Shunta Yamaoka¹, Koji Kobayashi¹, Koji Sueoka¹, Jan Vanhellemont² (1.Okayama Pref. Univ., 2.Ghent Univ.)

Keywords:point defect,Germanium,dopant