[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-3] Dopant impact on formation energy of intrinsic point defects in single crystal silicon

〇kouji kobayashi¹, Shunta Yamaoka¹, Koji Sueoka¹, Jan Vanhellemont² (1.Okayama Pref. Univ., 2.Ghent Univ.)

Keywords:Point defect,Silicon,Dopant