[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-4] First principles calculation on metal diffusion in vicinity of dopant in Si crystal

〇atsuhiro yamada¹, Sho Shiraswa¹, Koji Sueoka¹ (1.Okayama Pref. Univ.)

Keywords:Silicon,Gettering,dopant