1:30 PM - 3:30 PM
[21p-P11-6] Investigation of the 1SSF origin in 4H-SiC epitaxial layers
Keywords:4H-SiC,stacking fault,dislocation
Poster presentation
15 Crystal Engineering » 15.8 Crystal evaluation, impurities and crystal defects
Mon. Mar 21, 2016 1:30 PM - 3:30 PM P11 (Gymnasium)
1:30 PM - 3:30 PM
Keywords:4H-SiC,stacking fault,dislocation