[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-6] Investigation of the 1SSF origin in 4H-SiC epitaxial layers

〇Yu Nakamura¹, Tomoaki Furusho¹, Shigehisa Yamamoto¹ (1.Mitsubishi Electric Corp.)

Keywords:4H-SiC,stacking fault,dislocation