[21p-P11-1~11] 15.8 Crystal evaluation, impurities and crystal defects

[21p-P11-7] Observation of strain field in Al ion-implanted silicon carbide crystals by angle-resolved X-ray topography and local rocking curve imaging

〇Yumiko Takahashi¹, Keiichi Hirano¹, Takayoshi Shimura², Jun-ichi Yoshimura¹, Shinji Nagamachi³ (1.KEK-PF, 2.Osaka Univ., 3.Nagamachi Science Laboratory Co., Ltd.)

Keywords:topography,rocking curve,SiC

Grazing incidence synchrotron X-ray topography has been used to observe ion-implanted 4H-SiC epitaxial wafers. This time, we will report the strain distribution observed by angle-resolved X-ray topography and local rocking curve imaging method. A minute difference in tilt angle of SiC wafers was discriminated by this method.