[21p-P3-1~21] 6.2 Carbon-based thin films

[21p-P3-1] Barrier Height of Au-Ohmic Electrode on Hydrogen-Terminated Diamond (001) Surface

〇Shozo Kono¹, Tokuyuki Teraji², Daisuke Takeuchi³, Masahiko Ogura³, Hideyuki Kodama¹, Atsuhito Sawabe¹ (1.Aoyama Gakuin Univ., 2.NIMS, 3.AIST)

Keywords:diamond,barrier height,Au-electrode

Ohmic electrodes are important elements in diamond electronic devices and Au-electrodes are usually used in FET devices based on hydrogen-terminated p-type diamond. The barrier height (f_BH) of the Au-electrode at room temperature has been reported to be ~0.55, ~0.41, and ~0.49 eV from analyses of contact resistivities. X-ray photoelectron spectroscopy (XPS) is capable of directly determining f_BH. In this work, we have applied XPS to determine f_BH of the Au-electrode on H-terminated diamond (001) surface. We conclude that f_BH=~0.3 eV.