[21p-P5-1~2] 8.4 Plasma etching

[21p-P5-2] Effect of adsorption molecule on transition metal etching using neutral beam enhanced complex reaction

〇Tomohiro Kubota¹, Yoshiyuki Kikuchi², Hiroshi Ito³, Momoji Kubo³, Seiji Samukawa^1,4 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.IMR, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

Keywords:transition metal complex,magnetoresistive RAM,etching process

Anisotropic etching of transition metals (especially magnetic materials) is important for realization of MRAM. Recently Gu and Samukawa reported a damage-free anisotropic etching of transition metals using neutral beam and transition metal complex. The etching mechanism is investigated based on first-principles calculation.