[21p-P5-1~2] 8.4 Plasma etching

[21p-P5-1] Fast local etching of Si substrates using inward plasma

〇Jun Miyawaki¹, Ryo Kanou², Hiroshi Suga², Toshitaka Kubo¹, Atsushi Ando¹, Satoshi Takahashi³, Shun'ichiro Shimbori³, Tetsuo Shimizu¹ (1.AIST, 2.CIT, 3.Sanyu Co.,Ltd.)

Keywords:inward plasma,etching,Silicon

In the present study, we attempted to locally etch Si substrates by using the inward plasma etching apparatus. Etch rate larger than 20 micro m/min was achieved and it was possible to make a through hole on a 525 micro m thick Si wafer within 30 minutes. Furthermore, by monitoring the plasma emission from the back side of the substrate and varying the plasma irradiation time, it was possible to leave a membrane in the bottom of the hole with thickness of only a few micro m.