[21p-P8-1~5] 15.2 II-VI and related compounds

[21p-P8-1] Photoluminescence Properties of ZnS Films by Mist Chemical Vapor Deposition Method

〇(M1)Yasuyuki Asano¹, Kazuyuki Uno¹, Yuichiro Yamasaki¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

Keywords:mist chemical vapor deposition,zinc sulfide,chemical vapor deposition

We investigated temperature dependence of photoluminescence (PL) properties of zinc sulfide (ZnS) films growth by mist chemical vapor deposition (mist-CVD) from aqueous solutions. Broad PL peaks were observed about 400-500nm.The higher the growth temperature is, the stronger the PL intensity is and the smaller the thermal quenching is.Considering the high vapor pressure of sulfur atoms, the origin of PL is sulfur vacancies and they form highly efficient radiative recombination centers.