Oral presentation

[21a-H113-1~5] 15.2 II-VI and related compounds

Mon. Mar 21, 2016 9:00 AM - 10:15 AM H113 (H)

Takashi Yasuda(Ishinomaki Senshu Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[21a-H113-1] Cross-talk characteristics of organic-inorganic hybrid structure ZnSe-based UV-APD array

〇Shigeto Uchida¹, Kenta Tanaka¹, Ryouichi Inoue¹, Takeru Fujimoto¹, Akio Tazue¹, Hiroki Hirano¹, Takuya Kano¹, Tomoki Abe¹, Hirofumi Kasada¹, Koushi Ando¹, Kunio Ichino¹ (1.Tottori Univ.)

9:15 AM - 9:30 AM

[21a-H113-2] Structural Characterization of ZnMgS/GaP Grown by MBE

〇Masahiro Kadota¹, Shota Kashiyama¹, Kyoma Sahashi¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ.)

9:30 AM - 9:45 AM

[21a-H113-3] Structural characterization of ZnSTe/GaP Grown by MBE

〇Nao Namba¹, Syota Kashiyama¹, Hiroyasu Hasegawa¹, Kyoma Sahashi¹, Tomoki Abe¹, Kunio Ichino¹ (1.Tottori Univ)

9:45 AM - 10:00 AM

[21a-H113-4] Optical properties of Cl-doped ZnTeO grown by MBE

〇Tsutsumi Shuji¹, Yuuki Okano¹, Toshiki Terasawa¹, Tooru Tanaka¹, Katsuhiko Saitou¹, Qixin Guo¹, Mitsuhiro Nishio¹ (1.Saga Univ.)

10:00 AM - 10:15 AM

[21a-H113-5] Characterization of ZnCdO epilayers grown by molecular beam epitaxy

〇Shohei Ushio¹, Toshiki Terasawa¹, Yuuki Okano¹, Tooru Tanaka¹, Katsuhiko Saito¹, Qixin Gao¹, Mitsuhiro Nishio¹ (1.Saga Univ.)

Poster presentation

[21p-P8-1~5] 15.2 II-VI and related compounds

Mon. Mar 21, 2016 1:30 PM - 3:30 PM P8 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:30 PM - 3:30 PM

[21p-P8-1] Photoluminescence Properties of ZnS Films by Mist Chemical Vapor Deposition Method

〇(M1)Yasuyuki Asano¹, Kazuyuki Uno¹, Yuichiro Yamasaki¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

1:30 PM - 3:30 PM

[21p-P8-2] Fabrication of CdTe Strain-Free Dots Due to the Fluctuation of the Quantum-Well Width and Their Photoluminescence Spectrum

〇(M1)Hayato Utsumi¹, Keisuke Sakamoto¹, Ken Kanazawa¹, Shinji Kuroda¹, Alban Lafuente-Sampietro^1,2, Lucien Besombes², Herve Boukari² (1.Univ. of Tsukuba, 2.Inst. Neel)

1:30 PM - 3:30 PM

▲ [21p-P8-3] Synthesis of ZnO hierarchical nanostructures using NaOH as self-capping agent and optical properties

〇SankarGanesh Ramaraj¹, Navaneethan Mani¹, Ponnusamy Suruttaiyaudaiyar², Muthamizhchelvan Chellamuthu², Yasuhiro Hayakawa¹ (1.RIE Shizuoka Univ, 2.SRM Univ.)

1:30 PM - 3:30 PM

[21p-P8-4] Calculation of Electronic States in II-VI Semiconductor Alloys by IQB Theory : Zincblende Structure

〇Noriaki Fujimoto¹ (1.Wakayama Univ.)

1:30 PM - 3:30 PM

[21p-P8-5] Behavior of hydrogen in hydrogen-ion implanted KNbO₃ bulk single crystal: Evaluation by elastic recoil detection analysis

〇Ryotaro Tsuruoka¹, Akira Shinkawa¹, Tomoaki Nishimura¹, Chiaki Tanuma¹, Kazuo Kuriyama¹, Kazumasa Kushida² (1.Hosei Univ., 2.Osaka kyoiku Univ.)

Oral presentation

[22a-H116-1~6] 15.2 II-VI and related compounds

Tue. Mar 22, 2016 9:00 AM - 10:30 AM H116 (H)

Tooru Tanaka(Saga Univ.)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[22a-H116-1] Effect of the chemical cleaning of sapphire substrates on the domain structure of ZnTe thin films

〇Taizo Nakasu¹, Takeru Kizu¹, Shota Hattori¹, Yuki Hashimoto¹, Wei-Che Sun¹, Fukino Kazami¹, Jing Wang¹, Keisuke Odaka¹, Haruna Tamagawa¹, Yosuke Yamamoto¹, Masakazu Kobayashi^1,2, Toshiaki Asahi³ (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech., 3.JX Nippon Mining & Metals Corp.)

9:15 AM - 9:30 AM

△ [22a-H116-2] The growth process analysis of ZnTe on m-plane sapphire with nano-facet structure

〇Taizo Nakasu¹, Shota Hattori¹, Takeru Kizu¹, Yuki Hashimoto¹, Wei-Che Sun¹, Fukino Kazami¹, Jing Wang¹, Yosuke Yamamoto¹, Haruna Tamagawa¹, Keisuke Odaka¹, Masakazu Kobayashi^1,2, Toshiaki Asahi³ (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech., 3.JX Nippon Mining & Metals Corp.)

9:30 AM - 9:45 AM

[22a-H116-3] Mesa etching of ZnTe using a HF based etchant

〇Fukino Kazami¹, Wei-Che Sun¹, Jing Wang¹, Taizo Nakasu¹, Shota Hattori¹, Takeru Kizu¹, Yuki Hashimoto¹, Haruna Tamagawa¹, Keisuke Odaka¹, Yosuke Yamamoto¹, Masakazu Kobayashi^1,2, Toshiaki Asahi³ (1.Waseda Univ. Dept. EE&BS., 2.Waseda Univ. Lab.for Mat. Sci. & Tech., 3.JX Nippon Mining & Metals Corp.)

9:45 AM - 10:00 AM

▲ [22a-H116-4] Enhanced photocatalytic performance under visible light irradiation due to controlled morphology evolution of ZnO nanostructure

〇Harish Santhanakrishnan¹, Archana Jayaram¹, Navaneethan mani¹, Ponnusamy Suruttaiyaudaiyar², Muthamizhchelvan Chellamuthu², Yasuhiro Hayakawa¹ (1.RIE Shizuoka Univ, 2.SRM Univ.)

10:00 AM - 10:15 AM

[22a-H116-5] Emissions from deep levels in high-resistivity ZnTe crystals doped with group III elements

〇Satoru Seto¹, Kazuhiko Suzuki² (1.NIT, Ishikawa Coll., 2.HUS)

10:15 AM - 10:30 AM

△ [22a-H116-6] Characterization of Sb-doped ZnO microspheres synthesized by laser ablation in the air

〇Fumiaki Nagasaki¹, Tetsuya Shimogaki¹, Tatsuya Ikebuchi¹, Takeshi Ueyama¹, Toshinobu Tanaka¹, Yuki Fujiwara¹, Mitsuhiro Higashihata¹, Daisuke Nakamura¹, Tatsuo Okada¹ (1.Kyushu Univ.)

Oral presentation

[22p-H116-1~6] 15.2 II-VI and related compounds

Tue. Mar 22, 2016 1:00 PM - 2:30 PM H116 (H)

Tamotsu Okamoto(National Institute of Technology, Kisarazu College)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

[22p-H116-1] Photo-luminescence of CdTe growth layer on (211) and (100) Si substrate by MOVPE

〇Shozo Kitagawa¹, Satoshi Kono¹, Yuki Ito¹, Soichiro Sugimoto¹, Daisuke Yamazaki¹, Masahiro Kojima¹, Shintaro Tsubota¹, Yasunori Agata¹, Madan Niraula¹, Kazuhito Yasuda¹ (1.Nagoya Inst. of Tech)

1:15 PM - 1:30 PM

[22p-H116-2] Photo-Luminescence of As-doped CdTe layers grown on (211) Si Substrates by MOVPE

〇Masahiro Kojima¹, Yuki Ito¹, Satosi Kono¹, Soichiro Sugimoto¹, Daisuke Yamazaki¹, Syozo Kitagawa¹, Sintaro Tsubota¹, Kazuhito Yasuda¹, Madan Niraula¹, Yasunori Agata¹ (1.Nagoya Inst. Tech)

1:30 PM - 1:45 PM

[22p-H116-3] Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE

〇Shintaro Tsubota¹, Soichiro Sugimoto¹, Yuki Ito¹, Daisuke Yamazaki¹, Satoshi Kono¹, Masahiro Kojima¹, Syozo Kitagawa¹, Kazuhito Yasuda¹, Niraula Madan¹, Yasunori Agata¹ (1.Nagoya Inst. of Tech)

1:45 PM - 2:00 PM

[22p-H116-4] Synthesis and characterization of Cu₂ZnSnS₄ bulk polycrystalline

〇Akiko Takeuchi¹, Koichiro Oishi¹, Naritoshi Aoyagi¹, Genki Nishida¹, Wataru Shimizu¹, Kenta Nakamura¹, Hironori Katagiri¹, Makoto Yamazaki¹ (1.NIT, Nagaoka College)

2:00 PM - 2:15 PM

[22p-H116-5] Fabrication of CZTSSe by the Annealing under Controlled Se Vapor Pressure and Application to the Solar Cell

〇Yuto Umejima¹, Shunya Taki¹, Kazuki Kamimura¹, Aya Uruno¹, Zhang Xianfeng², Masakazu Kobayashi^1,3 (1.Waseda Univ.Dept.of Ele.Eng.and Biosci., 2.Waseda Univ.ICSEP, 3.Waseda Univ.Lab.for Mat.Sci. & Tech.)

2:15 PM - 2:30 PM

△ [22p-H116-6] The Growth of AgGaTe₂ on Si with Ag₂Te Buffer Layer and Solar Cell Application

〇(D)Aya Uruno¹, Masakazu Kobayashi^1,2 (1.Waseda Univ. Dept. of Elec. Eng. and Biosci., 2.Waseda Univ. Lab. for Mat. Sci. & Tech.)

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[21a-H113-1~5] 15.2 II-VI and related compounds

[21a-H113-1] Cross-talk characteristics of organic-inorganic hybrid structure ZnSe-based UV-APD array

[21a-H113-2] Structural Characterization of ZnMgS/GaP Grown by MBE

[21a-H113-3] Structural characterization of ZnSTe/GaP Grown by MBE

[21a-H113-4] Optical properties of Cl-doped ZnTeO grown by MBE

[21a-H113-5] Characterization of ZnCdO epilayers grown by molecular beam epitaxy

[21p-P8-1~5] 15.2 II-VI and related compounds

[21p-P8-1] Photoluminescence Properties of ZnS Films by Mist Chemical Vapor Deposition Method

[21p-P8-2] Fabrication of CdTe Strain-Free Dots Due to the Fluctuation of the Quantum-Well Width and Their Photoluminescence Spectrum

▲ [21p-P8-3] Synthesis of ZnO hierarchical nanostructures using NaOH as self-capping agent and optical properties

[21p-P8-4] Calculation of Electronic States in II-VI Semiconductor Alloys by IQB Theory : Zincblende Structure

[21p-P8-5] Behavior of hydrogen in hydrogen-ion implanted KNbO₃ bulk single crystal: Evaluation by elastic recoil detection analysis

[22a-H116-1~6] 15.2 II-VI and related compounds

[22a-H116-1] Effect of the chemical cleaning of sapphire substrates on the domain structure of ZnTe thin films

△ [22a-H116-2] The growth process analysis of ZnTe on m-plane sapphire with nano-facet structure

[22a-H116-3] Mesa etching of ZnTe using a HF based etchant

▲ [22a-H116-4] Enhanced photocatalytic performance under visible light irradiation due to controlled morphology evolution of ZnO nanostructure

[22a-H116-5] Emissions from deep levels in high-resistivity ZnTe crystals doped with group III elements

△ [22a-H116-6] Characterization of Sb-doped ZnO microspheres synthesized by laser ablation in the air

[22p-H116-1~6] 15.2 II-VI and related compounds

[22p-H116-1] Photo-luminescence of CdTe growth layer on (211) and (100) Si substrate by MOVPE

[22p-H116-2] Photo-Luminescence of As-doped CdTe layers grown on (211) Si Substrates by MOVPE

[22p-H116-3] Etch pit evaluation of (211) CdTe/Si layers grown by MOVPE

[22p-H116-4] Synthesis and characterization of Cu₂ZnSnS₄ bulk polycrystalline

[22p-H116-5] Fabrication of CZTSSe by the Annealing under Controlled Se Vapor Pressure and Application to the Solar Cell

△ [22p-H116-6] The Growth of AgGaTe₂ on Si with Ag₂Te Buffer Layer and Solar Cell Application

Authentication

Sessions

15 Crystal Engineering » 15.2 II-VI and related compounds

[21a-H113-1~5] 15.2 II-VI and related compounds

[21p-P8-1~5] 15.2 II-VI and related compounds

▲ [21p-P8-3] Synthesis of ZnO hierarchical nanostructures using NaOH as self-capping agent and optical properties

[22a-H116-1~6] 15.2 II-VI and related compounds

△ [22a-H116-2] The growth process analysis of ZnTe on m-plane sapphire with nano-facet structure

▲ [22a-H116-4] Enhanced photocatalytic performance under visible light irradiation due to controlled morphology evolution of ZnO nanostructure

△ [22a-H116-6] Characterization of Sb-doped ZnO microspheres synthesized by laser ablation in the air

[22p-H116-1~6] 15.2 II-VI and related compounds

△ [22p-H116-6] The Growth of AgGaTe2 on Si with Ag2Te Buffer Layer and Solar Cell Application

Authentication

△ [22p-H116-6] The Growth of AgGaTe₂ on Si with Ag₂Te Buffer Layer and Solar Cell Application