[21p-P9-1~9] 15.5 Group IV crystals and alloys

[21p-P9-3] Formation of GeSiSn films on Ge substrates by sputter epitaxy method

〇Kazuaki Haneda¹, Takahiro Tsukamoto¹, Nobumitsu Hirose², Akifumi Kasamatsu², Takashi Mimura², Toshiaki Matsui², Yoshiyuki Suda¹ (1.Tokyo Univ. Agric. Technol., 2.NICT)

Keywords:sputter epitaxy,semiconductor,GeSiSn