5:00 PM - 5:15 PM
[21p-S011-13] Ohmic contact formation of a metal/p-SiC junction by insertion of graphene to its interface
Keywords:graphene,SiC
How to form an Ohmic contact to p-type wide-band gap semiconductors is an open question. Here we demonstrate a breakthrough technology to solve this huge problem: an insertion of a few graphene layers in between an electrode and a p-type SiC semiconductor dramatically changes I-V behavior from Schottky type to Ohmic one, leading to a gigantic reduction of the contact resistance. This result indicates that the metal-graphene-semiconductor structure will be a promising contact technology for p-type wide-band gap semiconductors.