The 63rd JSAP Spring Meeting, 2016

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17 Nanocarbon Technology » 17.2 Graphene

[21p-S011-1~20] 17.2 Graphene

Mon. Mar 21, 2016 1:45 PM - 7:00 PM S011 (S0)

Akinobu Kanda(Univ. of Tsukuba), Shintaro Sato(Fujitsu Lab.)

2:30 PM - 2:45 PM

△ [21p-S011-4] Improvement of Ion/Ioff for bilayer graphene by encapsulation with h-BN

〇Teerayut Uwanno1, Takashi Taniguchi2, Kenji Watanabe2, Kosuke Nagashio1,3 (1.Tokyo Univ., 2.NIMS, 3.PRESTO-JST)

Keywords:Graphene,h-BN

h-BN/BLG/h-BNデュアルゲートFETのIon/Ioffを評価し，0.3eVのギャップ形成に必要な外部電界の観点からh-BNの特徴を議論する．