Electronic device applications of metal oxide thin films by atomic layer deposition method

Toshihide Nabatame

Presentation information

Symposium

Symposium » Advanced Fabrication System for Metal Oixde Thin Films

[21p-S222-1~9] Advanced Fabrication System for Metal Oixde Thin Films

Mon. Mar 21, 2016 1:30 PM - 6:15 PM S222 (S2)

Tetsuya Yamamoto(Kochi Univ. of Tech.), Akira Ohtomo(Titech)

5:15 PM - 5:45 PM

[21p-S222-8] Electronic device applications of metal oxide thin films by atomic layer deposition method

〇Toshihide Nabatame¹ (1.NIMS)

Keywords:Atomic layer deposition,Metal oxide thin film,Electronic device

We will present characteristics of DRAM, ReRAM and Flasy with metal oxide thin films by ALD method. We also discuss about influence of ALD condition on electrical properties of fixed charge of metal oxide thin films and effect of TMA on oxygen vacancy formation in TiO₂ films.