[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-12] Effect of Annealing on Structural Properties of Silicon Implanted by Neon Ion

〇Hitoe Habuchi¹, Atsushi Kitagawa¹, Kosuke Sonohara¹, Tamio Iida¹, Fumitaka Ohashi², Takayuki Ban², Tetsuji Kume², Shuichi Nonomura² (1.NIT, Gifu Coll., 2.Gifu Univ.)

Keywords:Si clathrate

It is theoretically possible that synthesis of rare gas-encapsulated Si clathrate with thermal annealing of a mixture of rare gas and Si. We prepared the mixture of rare gas and Si by ion implantation. We were not successful in synthesis of rare gas-encapsulated Si clathrate using Xe ion implanation so far. From this reason, the mixture of Ne and Si was prepared by Ne ion implantation. The result of the annealing will be described.