The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[21p-S223-1~17] 13.2 Exploratory Materials, Physical Properties, Devices

Mon. Mar 21, 2016 1:30 PM - 6:00 PM S223 (S2)

Kenji Yamaguchi(JAEA), Kosuke Hara(Univ. of Yamanashi)

5:00 PM - 5:15 PM

[21p-S223-14] Energetic consideration of compounds formed at Mg2Si-Ni electrode

Yoji Imai1, Hiroharu Sugawara2, Yoshihisa Mori3, Shigeyuki Nakamura4, Ken-ichi Takarabe3 (1.AIST, 2.Tokyo Metro. Univ., 3.Okayama Univ. Sci., 4.Tsuyama Natl. Col. Tech.)

Keywords:Mg-Ni-Si ternary alloys,electronic energy calculation

Mg2Si has attracted much attention as one of the eco-friendly thermoelectric semiconductors. Ni is usually used as an electrode to constitute thermoelectric energy-conversion device and authors have tried to obtain the unified device by a plasma sintering method using Mg2Si-Ni powder. It became clear that there was a boundary layer consisting of Ni, Mg and Si and this layer is composed of omega (or, nu) - phase, eta-phase, and the phase with the MgNi2- type structure which appear in the Mg-Ni-Si phase diagram by using electron beam diffraction method. However, the detailed structures of these phases such as occupancy of crystallographic sites by constituent atoms are not known.
In this report, we estimated the crystal structure of these phases using an energy optimization method and tried to clear the properties of these phases.