[21p-S622-1~20] 3.6 Ultrashort-pulse and high-intensity lasers

[21p-S622-7] Demonstration of petahertz driving using GaN semiconductor

〇Hiroki Mashiko¹, Katsuya Oguri¹, Tomohiko Yamaguchi², Akira Suda², Hideki Gotoh¹ (1.NTT BRL, 2.Tokyo Univ. of Science)

Keywords:Attosecond science,High-field physics,Ultrafast physics

The current technological fundamentals for high-speed operation in photonic and electronic devices rely on ultrafast control of the physical properties of semiconductors. Here we demonstrate optical drive at 1.16-PHz using gallium nitride (GaN) wide-bandgap semiconductor. A few-cycle near-infrared pulse induces the ultrafast electric interband polarization. The quantum interference constructed with the two transitions from the valence and conduction band states probed by an extremely short isolated attosecond pulse with coherent broadband spectrum reveal dipole oscillation with 860-as periodicity in the GaN electron and hole system. The resultant dipole frequency reaches 1.16 PHz, making this the first time the petahertz frequency barrier has been exceeded with semiconductor.